Analysis of transient processes in irradiated silicon p+nn+structures

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Бібліографічні деталі
Дата:2012
Автори: A. Z. Rakhmatov, A. V. Karimov
Формат: Стаття
Мова:Англійська
Опубліковано: 2012
Назва видання:Physical surface engineering
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000908776
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
_version_ 1859546071516053504
author A. Z. Rakhmatov
A. V. Karimov
author_facet A. Z. Rakhmatov
A. V. Karimov
author_sort A. Z. Rakhmatov
collection Open-Science
first_indexed 2025-07-22T13:33:24Z
format Article
id open-sciencenbuvgovua-94152
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-22T13:33:24Z
publishDate 2012
record_format dspace
series Physical surface engineering
spelling open-sciencenbuvgovua-941522024-04-17T17:04:31Z Analysis of transient processes in irradiated silicon p+nn+structures A. Z. Rakhmatov A. V. Karimov 1999-8074 2012 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000908776 Article
spellingShingle Physical surface engineering
A. Z. Rakhmatov
A. V. Karimov
Analysis of transient processes in irradiated silicon p+nn+structures
title Analysis of transient processes in irradiated silicon p+nn+structures
title_full Analysis of transient processes in irradiated silicon p+nn+structures
title_fullStr Analysis of transient processes in irradiated silicon p+nn+structures
title_full_unstemmed Analysis of transient processes in irradiated silicon p+nn+structures
title_short Analysis of transient processes in irradiated silicon p+nn+structures
title_sort analysis of transient processes in irradiated silicon p+nn+structures
url http://jnas.nbuv.gov.ua/article/UJRN-0000908776
work_keys_str_mv AT azrakhmatov analysisoftransientprocessesinirradiatedsiliconpnnstructures
AT avkarimov analysisoftransientprocessesinirradiatedsiliconpnnstructures