Mamatkarimov, O. O., Khamidov, K., Zhabborov, R. G., Tujchiev, U. A., & Kuchkarov, K. (2012). Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure.
Chicago Style (17th ed.) CitationMamatkarimov, O. O., Kh Khamidov, R. G. Zhabborov, U. A. Tujchiev, and Kh Kuchkarov. Relaxation Changes in the Mobility and Concentration of Charge Carriers in Si with Deep Impurity Levels Under the Action of Pulsed Pressure. 2012.
MLA (8th ed.) CitationMamatkarimov, O. O., et al. Relaxation Changes in the Mobility and Concentration of Charge Carriers in Si with Deep Impurity Levels Under the Action of Pulsed Pressure. 2012.
Warning: These citations may not always be 100% accurate.