Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure

Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure

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Datum:2012
Hauptverfasser: O. O. Mamatkarimov, Kh. Khamidov, R. G. Zhabborov, U. A. Tujchiev, Kh. Kuchkarov
Format: Artikel
Sprache:English
Veröffentlicht: 2012
Schriftenreihe:Physical surface engineering
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000908780
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-941562024-04-17T17:04:31Z Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure O. O. Mamatkarimov Kh. Khamidov R. G. Zhabborov U. A. Tujchiev Kh. Kuchkarov 1999-8074 2012 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000908780 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Physical surface engineering
spellingShingle Physical surface engineering
O. O. Mamatkarimov
Kh. Khamidov
R. G. Zhabborov
U. A. Tujchiev
Kh. Kuchkarov
Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
format Article
author O. O. Mamatkarimov
Kh. Khamidov
R. G. Zhabborov
U. A. Tujchiev
Kh. Kuchkarov
author_facet O. O. Mamatkarimov
Kh. Khamidov
R. G. Zhabborov
U. A. Tujchiev
Kh. Kuchkarov
author_sort O. O. Mamatkarimov
title Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
title_short Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
title_full Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
title_fullStr Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
title_full_unstemmed Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
title_sort relaxation changes in the mobility and concentration of charge carriers in si with deep impurity levels under the action of pulsed pressure
publishDate 2012
url http://jnas.nbuv.gov.ua/article/UJRN-0000908780
work_keys_str_mv AT oomamatkarimov relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure
AT khkhamidov relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure
AT rgzhabborov relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure
AT uatujchiev relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure
AT khkuchkarov relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure
first_indexed 2025-07-22T13:33:26Z
last_indexed 2025-07-22T13:33:26Z
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