Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure
Збережено в:
| Дата: | 2012 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2012
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| Назва видання: | Physical surface engineering |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000908780 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859546072685215744 |
|---|---|
| author | O. O. Mamatkarimov Kh. Khamidov R. G. Zhabborov U. A. Tujchiev Kh. Kuchkarov |
| author_facet | O. O. Mamatkarimov Kh. Khamidov R. G. Zhabborov U. A. Tujchiev Kh. Kuchkarov |
| author_sort | O. O. Mamatkarimov |
| collection | Open-Science |
| first_indexed | 2025-07-22T13:33:26Z |
| format | Article |
| id | open-sciencenbuvgovua-94156 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T13:33:26Z |
| publishDate | 2012 |
| record_format | dspace |
| series | Physical surface engineering |
| spelling | open-sciencenbuvgovua-941562024-04-17T17:04:31Z Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure O. O. Mamatkarimov Kh. Khamidov R. G. Zhabborov U. A. Tujchiev Kh. Kuchkarov 1999-8074 2012 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000908780 Article |
| spellingShingle | Physical surface engineering O. O. Mamatkarimov Kh. Khamidov R. G. Zhabborov U. A. Tujchiev Kh. Kuchkarov Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure |
| title | Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure |
| title_full | Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure |
| title_fullStr | Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure |
| title_full_unstemmed | Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure |
| title_short | Relaxation changes in the mobility and concentration of charge carriers in Si with deep impurity levels under the action of pulsed pressure |
| title_sort | relaxation changes in the mobility and concentration of charge carriers in si with deep impurity levels under the action of pulsed pressure |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000908780 |
| work_keys_str_mv | AT oomamatkarimov relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure AT khkhamidov relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure AT rgzhabborov relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure AT uatujchiev relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure AT khkuchkarov relaxationchangesinthemobilityandconcentrationofchargecarriersinsiwithdeepimpuritylevelsundertheactionofpulsedpressure |