On Bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures

Gespeichert in:
Bibliographische Detailangaben
Datum:2012
1. Verfasser: V. B. Timofeev
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2012
Schriftenreihe:Low Temperature Physics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000925401
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS
_version_ 1859546134884646912
author V. B. Timofeev
author_facet V. B. Timofeev
author_sort V. B. Timofeev
collection Open-Science
first_indexed 2025-07-22T13:35:25Z
format Article
id open-sciencenbuvgovua-94235
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-22T13:35:25Z
publishDate 2012
record_format dspace
series Low Temperature Physics
spelling open-sciencenbuvgovua-942352024-04-17T17:05:19Z On Bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures V. B. Timofeev 0132-6414 2012 en Low Temperature Physics http://jnas.nbuv.gov.ua/article/UJRN-0000925401 Article
spellingShingle Low Temperature Physics
V. B. Timofeev
On Bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures
title On Bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures
title_full On Bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures
title_fullStr On Bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures
title_full_unstemmed On Bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures
title_short On Bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures
title_sort on bose condensation of exitons in quasi-two-dimensional semiconductor heterostructures
url http://jnas.nbuv.gov.ua/article/UJRN-0000925401
work_keys_str_mv AT vbtimofeev onbosecondensationofexitonsinquasitwodimensionalsemiconductorheterostructures