Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)

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Бібліографічні деталі
Дата:2012
Автор: O. B. Okhrimenko
Формат: Стаття
Мова:Англійська
Опубліковано: 2012
Назва видання:Optoelectronics and Semiconductor Technique
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0001287274
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-949072024-04-17T17:09:23Z Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review) O. B. Okhrimenko 2707-6806 2012 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001287274 Article
spellingShingle Optoelectronics and Semiconductor Technique
O. B. Okhrimenko
Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_full Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_fullStr Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_full_unstemmed Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_short Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_sort effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
url http://jnas.nbuv.gov.ua/article/UJRN-0001287274
work_keys_str_mv AT obokhrimenko effectofbufferlayerofporoussiliconcarbideontheinterfacewiththeoxidelayerreview