Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)

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Datum:2012
1. Verfasser: O. B. Okhrimenko
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2012
Schriftenreihe:Optoelectronics and Semiconductor Technique
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0001287274
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author O. B. Okhrimenko
author_facet O. B. Okhrimenko
author_sort O. B. Okhrimenko
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spelling open-sciencenbuvgovua-949072024-04-17T17:09:23Z Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review) O. B. Okhrimenko 2707-6806 2012 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001287274 Article
spellingShingle Optoelectronics and Semiconductor Technique
O. B. Okhrimenko
Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_full Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_fullStr Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_full_unstemmed Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_short Effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
title_sort effect of buffer layer of porous silicon carbide on the interface with the oxide layer (review)
url http://jnas.nbuv.gov.ua/article/UJRN-0001287274
work_keys_str_mv AT obokhrimenko effectofbufferlayerofporoussiliconcarbideontheinterfacewiththeoxidelayerreview