Electrophysical properties of meso-porous silicon free standing films modified with palladium
Saved in:
| Date: | 2011 |
|---|---|
| Main Authors: | A. I. Manilov, V. A. Skryshevsky, S. A. Alekseev, G. V. Kuznetsov |
| Format: | Article |
| Language: | English |
| Published: |
2011
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000349422 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Electrophysical properties of meso-porous silicon free standing films modified with palladium
by: Manilov, A.I., et al.
Published: (2011) -
Dynamic electrophysical characterization of porous silicon humidity sensing
by: Bravina, S., et al.
Published: (2006) -
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
by: I. B. Olenych
Published: (2012) -
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
by: Olenych, І.B.
Published: (2012) -
Problems of application of porous silicon to chemical and photocatalytic production of hydrogen
by: A. I. Manilov
Published: (2016)