Optimal solution in producing 32nm CMOS technology transistor with desired leakage current

Optimal solution in producing 32nm CMOS technology transistor with desired leakage current

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Bibliographic Details
Date:2011
Main Authors: H. A. lgomati, I. Ahmad, F. Salehuddin, F. A. Hamid, A. Zaharim, B. Y. Majlis, P. R. Apte
Format: Article
Language:English
Published: 2011
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000349484
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-96128
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spelling open-sciencenbuvgovua-961282024-04-17T17:24:57Z Optimal solution in producing 32nm CMOS technology transistor with desired leakage current H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349484 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
H. A. lgomati
I. Ahmad
F. Salehuddin
F. A. Hamid
A. Zaharim
B. Y. Majlis
P. R. Apte
Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
format Article
author H. A. lgomati
I. Ahmad
F. Salehuddin
F. A. Hamid
A. Zaharim
B. Y. Majlis
P. R. Apte
author_facet H. A. lgomati
I. Ahmad
F. Salehuddin
F. A. Hamid
A. Zaharim
B. Y. Majlis
P. R. Apte
author_sort H. A. lgomati
title Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
title_short Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
title_full Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
title_fullStr Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
title_full_unstemmed Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
title_sort optimal solution in producing 32nm cmos technology transistor with desired leakage current
publishDate 2011
url http://jnas.nbuv.gov.ua/article/UJRN-0000349484
work_keys_str_mv AT halgomati optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent
AT iahmad optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent
AT fsalehuddin optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent
AT fahamid optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent
AT azaharim optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent
AT bymajlis optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent
AT prapte optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent
first_indexed 2025-07-22T14:07:29Z
last_indexed 2025-07-22T14:07:29Z
_version_ 1850421528059969536

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