Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
Збережено в:
| Дата: | 2011 |
|---|---|
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2011
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000349484 |
| Теги: |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859547419573747712 |
|---|---|
| author | H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte |
| author_facet | H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte |
| author_sort | H. A. lgomati |
| collection | Open-Science |
| first_indexed | 2025-07-22T14:07:29Z |
| format | Article |
| id | open-sciencenbuvgovua-96128 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T14:07:29Z |
| publishDate | 2011 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-961282024-04-17T17:24:57Z Optimal solution in producing 32nm CMOS technology transistor with desired leakage current H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349484 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title | Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_full | Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_fullStr | Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_full_unstemmed | Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_short | Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_sort | optimal solution in producing 32nm cmos technology transistor with desired leakage current |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000349484 |
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