Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
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| Дата: | 2011 |
|---|---|
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2011
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000349484 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-96128 |
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open-sciencenbuvgovua-961282024-04-17T17:24:57Z Optimal solution in producing 32nm CMOS technology transistor with desired leakage current H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349484 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| format |
Article |
| author |
H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte |
| author_facet |
H. A. lgomati I. Ahmad F. Salehuddin F. A. Hamid A. Zaharim B. Y. Majlis P. R. Apte |
| author_sort |
H. A. lgomati |
| title |
Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_short |
Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_full |
Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_fullStr |
Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_full_unstemmed |
Optimal solution in producing 32nm CMOS technology transistor with desired leakage current |
| title_sort |
optimal solution in producing 32nm cmos technology transistor with desired leakage current |
| publishDate |
2011 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000349484 |
| work_keys_str_mv |
AT halgomati optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent AT iahmad optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent AT fsalehuddin optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent AT fahamid optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent AT azaharim optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent AT bymajlis optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent AT prapte optimalsolutioninproducing32nmcmostechnologytransistorwithdesiredleakagecurrent |
| first_indexed |
2024-04-18T05:24:35Z |
| last_indexed |
2024-04-18T05:24:35Z |
| _version_ |
1796887310447411200 |