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Optimal solution in producing 32nm CMOS technology transistor with desired leakage current

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Bibliographic Details
Date:	2011
Main Authors:	H. A. lgomati, I. Ahmad, F. Salehuddin, F. A. Hamid, A. Zaharim, B. Y. Majlis, P. R. Apte
Format:	Article
Language:	English
Published:	2011
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000349484
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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