Changes in Hall parameters after -irradiation (60So) of n-Ge

Збережено в:
Бібліографічні деталі
Дата:2011
Автор: G. P. Gaidar
Формат: Стаття
Мова:Англійська
Опубліковано: 2011
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000349739
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

Репозитарії

Library portal of National Academy of Sciences of Ukraine | LibNAS
_version_ 1859547424887930880
author G. P. Gaidar
author_facet G. P. Gaidar
author_sort G. P. Gaidar
collection Open-Science
first_indexed 2025-07-22T14:07:39Z
format Article
id open-sciencenbuvgovua-96153
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-22T14:07:39Z
publishDate 2011
record_format dspace
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spelling open-sciencenbuvgovua-961532024-04-17T17:25:17Z Changes in Hall parameters after -irradiation (60So) of n-Ge G. P. Gaidar 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349739 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
G. P. Gaidar
Changes in Hall parameters after -irradiation (60So) of n-Ge
title Changes in Hall parameters after -irradiation (60So) of n-Ge
title_full Changes in Hall parameters after -irradiation (60So) of n-Ge
title_fullStr Changes in Hall parameters after -irradiation (60So) of n-Ge
title_full_unstemmed Changes in Hall parameters after -irradiation (60So) of n-Ge
title_short Changes in Hall parameters after -irradiation (60So) of n-Ge
title_sort changes in hall parameters after -irradiation (60so) of n-ge
url http://jnas.nbuv.gov.ua/article/UJRN-0000349739
work_keys_str_mv AT gpgaidar changesinhallparametersafterirradiation60soofnge