Changes in Hall parameters after -irradiation (60So) of n-Ge

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Бібліографічні деталі
Дата:	2011
Автор:	G. P. Gaidar
Формат:	Стаття
Мова:	English
Опубліковано:	2011
Назва видання:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:	http://jnas.nbuv.gov.ua/article/UJRN-0000349739
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Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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spelling	open-sciencenbuvgovua-961532024-04-17T17:25:17Z Changes in Hall parameters after -irradiation (60So) of n-Ge G. P. Gaidar 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349739 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle	Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar Changes in Hall parameters after -irradiation (60So) of n-Ge
format	Article
author	G. P. Gaidar
author_facet	G. P. Gaidar
author_sort	G. P. Gaidar
title	Changes in Hall parameters after -irradiation (60So) of n-Ge
title_short	Changes in Hall parameters after -irradiation (60So) of n-Ge
title_full	Changes in Hall parameters after -irradiation (60So) of n-Ge
title_fullStr	Changes in Hall parameters after -irradiation (60So) of n-Ge
title_full_unstemmed	Changes in Hall parameters after -irradiation (60So) of n-Ge
title_sort	changes in hall parameters after -irradiation (60so) of n-ge
publishDate	2011
url	http://jnas.nbuv.gov.ua/article/UJRN-0000349739
work_keys_str_mv	AT gpgaidar changesinhallparametersafterirradiation60soofnge
first_indexed	2024-04-18T05:24:41Z
last_indexed	2024-04-18T05:24:41Z
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