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Changes in Hall parameters after -irradiation (60So) of n-Ge
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Format: | Article |
Language: | English |
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2011
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Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000349739 |
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open-sciencenbuvgovua-961532024-04-17T17:25:17Z Changes in Hall parameters after -irradiation (60So) of n-Ge G. P. Gaidar 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349739 Article |
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Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Open-Science |
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English |
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Semiconductor Physics, Quantum Electronics and Optoelectronics |
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Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar Changes in Hall parameters after -irradiation (60So) of n-Ge |
format |
Article |
author |
G. P. Gaidar |
author_facet |
G. P. Gaidar |
author_sort |
G. P. Gaidar |
title |
Changes in Hall parameters after -irradiation (60So) of n-Ge |
title_short |
Changes in Hall parameters after -irradiation (60So) of n-Ge |
title_full |
Changes in Hall parameters after -irradiation (60So) of n-Ge |
title_fullStr |
Changes in Hall parameters after -irradiation (60So) of n-Ge |
title_full_unstemmed |
Changes in Hall parameters after -irradiation (60So) of n-Ge |
title_sort |
changes in hall parameters after -irradiation (60so) of n-ge |
publishDate |
2011 |
url |
http://jnas.nbuv.gov.ua/article/UJRN-0000349739 |
work_keys_str_mv |
AT gpgaidar changesinhallparametersafterirradiation60soofnge |
first_indexed |
2024-04-18T05:24:41Z |
last_indexed |
2024-04-18T05:24:41Z |
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1796887313059414016 |