Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities

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Datum:2011
1. Verfasser: T. A. Ignatyeva
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2011
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000349835
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author T. A. Ignatyeva
author_facet T. A. Ignatyeva
author_sort T. A. Ignatyeva
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spelling open-sciencenbuvgovua-961872024-04-17T17:25:35Z Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities T. A. Ignatyeva 1560-8034 2011 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349835 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
T. A. Ignatyeva
Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
title Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
title_full Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
title_fullStr Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
title_full_unstemmed Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
title_short Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
title_sort partial dielectric behavior of the mo electron spectrum as an effect of van hove singularities
url http://jnas.nbuv.gov.ua/article/UJRN-0000349835
work_keys_str_mv AT taignatyeva partialdielectricbehaviorofthemoelectronspectrumasaneffectofvanhovesingularities