Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting
Збережено в:
| Дата: | 2011 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2011
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| Назва видання: | Optoelectronics and Semiconductor Technique |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000363684 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859547595894947840 |
|---|---|
| author | Yu. A. Asnis P. I. Baranskyi V. M. Babych N. V. Piskun I. I. Statkevych |
| author_facet | Yu. A. Asnis P. I. Baranskyi V. M. Babych N. V. Piskun I. I. Statkevych |
| author_sort | Yu. A. Asnis |
| collection | Open-Science |
| first_indexed | 2025-07-22T14:13:25Z |
| format | Article |
| id | open-sciencenbuvgovua-96494 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T14:13:25Z |
| publishDate | 2011 |
| record_format | dspace |
| series | Optoelectronics and Semiconductor Technique |
| spelling | open-sciencenbuvgovua-964942024-04-17T17:27:11Z Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting Yu. A. Asnis P. I. Baranskyi V. M. Babych N. V. Piskun I. I. Statkevych 2707-6806 2011 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0000363684 Article |
| spellingShingle | Optoelectronics and Semiconductor Technique Yu. A. Asnis P. I. Baranskyi V. M. Babych N. V. Piskun I. I. Statkevych Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting |
| title | Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting |
| title_full | Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting |
| title_fullStr | Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting |
| title_full_unstemmed | Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting |
| title_short | Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting |
| title_sort | contents of doping and background impurities in si single crystals, obtained by czucibleless electron-beam zone melting |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000363684 |
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