2025-02-23T16:29:03-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-96494%22&qt=morelikethis&rows=5
2025-02-23T16:29:03-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22open-sciencenbuvgovua-96494%22&qt=morelikethis&rows=5
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Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting

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Bibliographic Details
Main Authors: Yu. A. Asnis, P. I. Baranskyi, V. M. Babych, N. V. Piskun, I. I. Statkevych
Format: Article
Language:English
Published: 2011
Series:Optoelectronics and Semiconductor Technique
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000363684
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spelling open-sciencenbuvgovua-964942024-04-17T17:27:11Z Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting Yu. A. Asnis P. I. Baranskyi V. M. Babych N. V. Piskun I. I. Statkevych 2707-6806 2011 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0000363684 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Optoelectronics and Semiconductor Technique
spellingShingle Optoelectronics and Semiconductor Technique
Yu. A. Asnis
P. I. Baranskyi
V. M. Babych
N. V. Piskun
I. I. Statkevych
Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting
format Article
author Yu. A. Asnis
P. I. Baranskyi
V. M. Babych
N. V. Piskun
I. I. Statkevych
author_facet Yu. A. Asnis
P. I. Baranskyi
V. M. Babych
N. V. Piskun
I. I. Statkevych
author_sort Yu. A. Asnis
title Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting
title_short Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting
title_full Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting
title_fullStr Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting
title_full_unstemmed Contents of doping and background impurities in Si single crystals, obtained by czucibleless electron-beam zone melting
title_sort contents of doping and background impurities in si single crystals, obtained by czucibleless electron-beam zone melting
publishDate 2011
url http://jnas.nbuv.gov.ua/article/UJRN-0000363684
work_keys_str_mv AT yuaasnis contentsofdopingandbackgroundimpuritiesinsisinglecrystalsobtainedbyczuciblelesselectronbeamzonemelting
AT pibaranskyi contentsofdopingandbackgroundimpuritiesinsisinglecrystalsobtainedbyczuciblelesselectronbeamzonemelting
AT vmbabych contentsofdopingandbackgroundimpuritiesinsisinglecrystalsobtainedbyczuciblelesselectronbeamzonemelting
AT nvpiskun contentsofdopingandbackgroundimpuritiesinsisinglecrystalsobtainedbyczuciblelesselectronbeamzonemelting
AT iistatkevych contentsofdopingandbackgroundimpuritiesinsisinglecrystalsobtainedbyczuciblelesselectronbeamzonemelting
first_indexed 2024-04-18T05:26:03Z
last_indexed 2024-04-18T05:26:03Z
_version_ 1796887348660666368