Krukovskyi, S. I., Sukach, A. V., Tetorkin, V. V., Mrykhin, I. O., & Mykhashchuk, Y. S. (2011). Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes.
Chicago-Zitierstil (17. Ausg.)Krukovskyi, S. I., A. V. Sukach, V. V. Tetorkin, I. O. Mrykhin, und Yu. S. Mykhashchuk. Properties of P+-InP/n-InGaAsP/n-InP Double Heterojunctions Grown at Different Technological Regimes. 2011.
MLA-Zitierstil (8. Ausg.)Krukovskyi, S. I., et al. Properties of P+-InP/n-InGaAsP/n-InP Double Heterojunctions Grown at Different Technological Regimes. 2011.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.