APA (7th ed.) Citation

Krukovskyi, S. I., Sukach, A. V., Tetorkin, V. V., Mrykhin, I. O., & Mykhashchuk, Y. S. (2011). Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes.

Chicago Style (17th ed.) Citation

Krukovskyi, S. I., A. V. Sukach, V. V. Tetorkin, I. O. Mrykhin, and Yu. S. Mykhashchuk. Properties of P+-InP/n-InGaAsP/n-InP Double Heterojunctions Grown at Different Technological Regimes. 2011.

MLA (8th ed.) Citation

Krukovskyi, S. I., et al. Properties of P+-InP/n-InGaAsP/n-InP Double Heterojunctions Grown at Different Technological Regimes. 2011.

Warning: These citations may not always be 100% accurate.