Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
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| Дата: | 2011 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2011
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| Назва видання: | Optoelectronics and Semiconductor Technique |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000363687 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859547597060964352 |
|---|---|
| author | S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk |
| author_facet | S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk |
| author_sort | S. I. Krukovskyi |
| collection | Open-Science |
| first_indexed | 2025-07-22T14:13:26Z |
| format | Article |
| id | open-sciencenbuvgovua-96497 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T14:13:26Z |
| publishDate | 2011 |
| record_format | dspace |
| series | Optoelectronics and Semiconductor Technique |
| spelling | open-sciencenbuvgovua-964972024-04-17T17:27:11Z Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk 2707-6806 2011 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0000363687 Article |
| spellingShingle | Optoelectronics and Semiconductor Technique S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title | Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_full | Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_fullStr | Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_full_unstemmed | Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_short | Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_sort | properties of p+-inp/n-ingaasp/n-inp double heterojunctions grown at different technological regimes |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000363687 |
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