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Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes

Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes

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Bibliographic Details
Main Authors: S. I. Krukovskyi, A. V. Sukach, V. V. Tetorkin, I. O. Mrykhin, Yu. S. Mykhashchuk
Format: Article
Language:English
Published: 2011
Series:Optoelectronics and Semiconductor Technique
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000363687
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spelling open-sciencenbuvgovua-964972024-04-17T17:27:11Z Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk 2707-6806 2011 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0000363687 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Optoelectronics and Semiconductor Technique
spellingShingle Optoelectronics and Semiconductor Technique
S. I. Krukovskyi
A. V. Sukach
V. V. Tetorkin
I. O. Mrykhin
Yu. S. Mykhashchuk
Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
format Article
author S. I. Krukovskyi
A. V. Sukach
V. V. Tetorkin
I. O. Mrykhin
Yu. S. Mykhashchuk
author_facet S. I. Krukovskyi
A. V. Sukach
V. V. Tetorkin
I. O. Mrykhin
Yu. S. Mykhashchuk
author_sort S. I. Krukovskyi
title Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
title_short Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
title_full Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
title_fullStr Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
title_full_unstemmed Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
title_sort properties of p+-inp/n-ingaasp/n-inp double heterojunctions grown at different technological regimes
publishDate 2011
url http://jnas.nbuv.gov.ua/article/UJRN-0000363687
work_keys_str_mv AT sikrukovskyi propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes
AT avsukach propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes
AT vvtetorkin propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes
AT iomrykhin propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes
AT yusmykhashchuk propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes
first_indexed 2024-04-18T05:26:04Z
last_indexed 2024-04-18T05:26:04Z
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