Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
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| Дата: | 2011 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2011
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| Назва видання: | Optoelectronics and Semiconductor Technique |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000363687 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-96497 |
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open-sciencenbuvgovua-964972024-04-17T17:27:11Z Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk 2707-6806 2011 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0000363687 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Optoelectronics and Semiconductor Technique |
| spellingShingle |
Optoelectronics and Semiconductor Technique S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| format |
Article |
| author |
S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk |
| author_facet |
S. I. Krukovskyi A. V. Sukach V. V. Tetorkin I. O. Mrykhin Yu. S. Mykhashchuk |
| author_sort |
S. I. Krukovskyi |
| title |
Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_short |
Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_full |
Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_fullStr |
Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_full_unstemmed |
Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes |
| title_sort |
properties of p+-inp/n-ingaasp/n-inp double heterojunctions grown at different technological regimes |
| publishDate |
2011 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000363687 |
| work_keys_str_mv |
AT sikrukovskyi propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes AT avsukach propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes AT vvtetorkin propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes AT iomrykhin propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes AT yusmykhashchuk propertiesofpinpningaaspninpdoubleheterojunctionsgrownatdifferenttechnologicalregimes |
| first_indexed |
2024-04-18T05:26:04Z |
| last_indexed |
2024-04-18T05:26:04Z |
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