Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility

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Бібліографічні деталі
Дата:2011
Автори: M. Bataev, Ju. Bataev, L. Brillson
Формат: Стаття
Мова:English
Опубліковано: 2011
Назва видання:Nanosystems, nanomaterials, nanotechnologies
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000473551
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-973072024-04-17T17:33:36Z Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility M. Bataev Ju. Bataev L. Brillson 1816-5230 2011 en Nanosystems, nanomaterials, nanotechnologies http://jnas.nbuv.gov.ua/article/UJRN-0000473551 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Nanosystems, nanomaterials, nanotechnologies
spellingShingle Nanosystems, nanomaterials, nanotechnologies
M. Bataev
Ju. Bataev
L. Brillson
Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
format Article
author M. Bataev
Ju. Bataev
L. Brillson
author_facet M. Bataev
Ju. Bataev
L. Brillson
author_sort M. Bataev
title Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
title_short Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
title_full Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
title_fullStr Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
title_full_unstemmed Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
title_sort impact of proton irradiation on algan/gan transistors with high electron mobility
publishDate 2011
url http://jnas.nbuv.gov.ua/article/UJRN-0000473551
work_keys_str_mv AT mbataev impactofprotonirradiationonalgangantransistorswithhighelectronmobility
AT jubataev impactofprotonirradiationonalgangantransistorswithhighelectronmobility
AT lbrillson impactofprotonirradiationonalgangantransistorswithhighelectronmobility
first_indexed 2024-04-18T05:29:23Z
last_indexed 2024-04-18T05:29:23Z
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