Gunn Diode with Tunnel p++-n++-cathode
Диод Ганна с туннельным p++-n++-катодом
Saved in:
| Date: | 2013 |
|---|---|
| Main Authors: | Arkusha, Yu. V., Prokhorov, E. D., Storozhenko, I. P. |
| Format: | Article |
| Language: | Russian |
| Published: |
Видавничий дім «Академперіодика»
2013
|
| Online Access: | http://rpra-journal.org.ua/index.php/ra/article/view/1011 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Radio physics and radio astronomy |
Institution
Radio physics and radio astronomySimilar Items
GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)
by: Storozhenko, I. P., et al.
Published: (2013)
Gunn Diode with Induced Channel in Active Region
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
Influence of Temperature on Energy and Frequency Characteristics of mm-Waves Heterocathode Gunn Diodes
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
Metallic Cathode Contact for Gunn Diodes on Basis of Some Novel A3B5 Semiconductor Compounds
by: Arkusha, Yu. V.
Published: (2013)
by: Arkusha, Yu. V.
Published: (2013)
Graded-gap AlInN Gunn diodes
by: I. P. Storozhenko, et al.
Published: (2012)
by: I. P. Storozhenko, et al.
Published: (2012)
Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
by: Storozhenko, I. P.
Published: (2013)
by: Storozhenko, I. P.
Published: (2013)
AlGaInAs graded-dap Gunn diode
by: I. P. Storozhenko, et al.
Published: (2016)
by: I. P. Storozhenko, et al.
Published: (2016)
Terahertz oscillations in InN Gunn diodes with an active region length of 1 μm and with a graded GaInN layer
by: I. P. Storozhenko, et al.
Published: (2022)
by: I. P. Storozhenko, et al.
Published: (2022)
TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER
by: Storozhenko, I. P., et al.
Published: (2023)
by: Storozhenko, I. P., et al.
Published: (2023)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Constructively technological features of HIC for millimeter autodyne on Gunn diodes
by: S. D. Votoropin
Published: (2006)
by: S. D. Votoropin
Published: (2006)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)
by: Belyaev, A.E., et al.
Published: (2015)
Gunn Diode Millimetre-Wave Frequency Shift Mixer-Amplifier
by: Plaksin, S. V., et al.
Published: (2013)
by: Plaksin, S. V., et al.
Published: (2013)
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
by: Belyaev, A.E., et al.
Published: (2005)
by: Belyaev, A.E., et al.
Published: (2005)
Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
by: Belyaev, A.E., et al.
Published: (2004)
by: Belyaev, A.E., et al.
Published: (2004)
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
by: V. L. Borblik, et al.
Published: (2017)
by: V. L. Borblik, et al.
Published: (2017)
Heterostructure-based diode with the cathode static domain
by: O. V. Botsula, et al.
Published: (2015)
by: O. V. Botsula, et al.
Published: (2015)
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
by: Belyaev, A.A., et al.
Published: (1999)
by: Belyaev, A.A., et al.
Published: (1999)
Electrostatics of the nanowire radial p-i-n diode
by: V. L. Borblik
Published: (2019)
by: V. L. Borblik
Published: (2019)
Spin-dependent current in silicon p-n junction diodes
by: O. V. Tretyak, et al.
Published: (2010)
by: O. V. Tretyak, et al.
Published: (2010)
Spin-dependent current in silicon p-n junction diodes
by: Tretyak, O.V., et al.
Published: (2010)
by: Tretyak, O.V., et al.
Published: (2010)
Action of Random Force on Gunn Domain
by: Bass, F. G., et al.
Published: (2012)
by: Bass, F. G., et al.
Published: (2012)
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
Millimeter wave p—i—n-diode switching controlled devices
by: N. F. Karushkin, et al.
Published: (2016)
by: N. F. Karushkin, et al.
Published: (2016)
Influence of the cold cathode material on the operating mode of the pulse high-current vacuum diode in a microsecond range
by: Kolyada, Yu.E.
Published: (1999)
by: Kolyada, Yu.E.
Published: (1999)
Modeling of thermal processes ohigh-frequency silicon p-i-n-diode
by: A. V. Karimov, et al.
Published: (2014)
by: A. V. Karimov, et al.
Published: (2014)
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures
by: Borblik, V. L., et al.
Published: (2017)
by: Borblik, V. L., et al.
Published: (2017)
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
by: Vitusevich, S. A., et al.
Published: (1999)
by: Vitusevich, S. A., et al.
Published: (1999)
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
by: V. V. Korotyeyev, et al.
Published: (2018)
by: V. V. Korotyeyev, et al.
Published: (2018)
Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization
by: Korotyeyev, V.V., et al.
Published: (2018)
by: Korotyeyev, V.V., et al.
Published: (2018)
Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
by: Ya. Bomba, et al.
Published: (2021)
by: Ya. Bomba, et al.
Published: (2021)
Impact of traps on current-voltage characteristic of n+-n-n+ diode
by: P. M. Kruglenko
Published: (2017)
by: P. M. Kruglenko
Published: (2017)
Radiation influence on characteristics of GaP light emitting diodes
by: Borzakovskyj, A., et al.
Published: (2009)
by: Borzakovskyj, A., et al.
Published: (2009)
Low doses effect in GaP light-emitting diodes
by: O. M. Hontaruk, et al.
Published: (2016)
by: O. M. Hontaruk, et al.
Published: (2016)
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
by: Borblik, V.L., et al.
Published: (2009)
by: Borblik, V.L., et al.
Published: (2009)
Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode
by: V. L. Borblik
Published: (2017)
by: V. L. Borblik
Published: (2017)
Ultrasound influence on exciton emission of GaP light diodes
by: Gontaruk, O.M., et al.
Published: (2003)
by: Gontaruk, O.M., et al.
Published: (2003)
Surface distribution of the emitting intensity of GaP light-emitting diodes
by: O. V. Konoreva, et al.
Published: (2013)
by: O. V. Konoreva, et al.
Published: (2013)
The injection photo diode on the basis of nSi-nCdS-n+CdS heterostructures
by: I. B. Sapaev
Published: (2013)
by: I. B. Sapaev
Published: (2013)
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
by: A. Latreche
Published: (2019)
by: A. Latreche
Published: (2019)
Similar Items
-
GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013) -
Gunn Diode with Induced Channel in Active Region
by: Arkusha, Yu. V., et al.
Published: (2013) -
Influence of Temperature on Energy and Frequency Characteristics of mm-Waves Heterocathode Gunn Diodes
by: Arkusha, Yu. V., et al.
Published: (2013) -
Metallic Cathode Contact for Gunn Diodes on Basis of Some Novel A3B5 Semiconductor Compounds
by: Arkusha, Yu. V.
Published: (2013) -
Graded-gap AlInN Gunn diodes
by: I. P. Storozhenko, et al.
Published: (2012)