PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT

• Datum: 2014
• 1. Verfasser: Korolev, A. M.
• Format: Artikel
• Sprache: Russisch
• Veröffentlicht: Видавничий дім «Академперіодика» 2014
• Schlagworte: pseudomorphic field-effect transistor with high electron mobility; microwave amplifier; low source voltage; temperature stability
• Online Zugang: http://rpra-journal.org.ua/index.php/ra/article/view/1176
• Назва журналу: Radio physics and radio astronomy

The PHEMTs are proposed to be used as circuit elements for low-power-consumption microwave (1− 4 GHz) amplifiers operating in a wide temperature range environment. Experimental amplifier operates within temperatures −100 to +100°C preserving the general electrical properties. It seems reasonable to...