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PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT

The PHEMTs are proposed to be used as circuit elements for low-power-consumption microwave (1− 4 GHz) amplifiers operating in a wide temperature range environment. Experimental amplifier operates within temperatures −100 to +100°C preserving the general electrical properties. It seems reasonable to...

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Bibliographic Details
Date:	2014
Main Author:	Korolev, A. M.
Format:	Article
Language:	Russian
Published:	Видавничий дім «Академперіодика» 2014
Subjects:	pseudomorphic field-effect transistor with high electron mobility microwave amplifier low source voltage temperature stability
Online Access:	http://rpra-journal.org.ua/index.php/ra/article/view/1176
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Journal Title:	Radio physics and radio astronomy

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Radio physics and radio astronomy

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