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A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARY

Предмет і мета роботи. Розглядається генерація електромагнітних коливань в міліметровому діапазоні планарними GaAs-діодами з активними бічними границями (АБГ). Діодні структури складаються з GaAs-каналу довжиною близько 1 мкм, який розміщено на напівізолюючій підкладці з напівпровідникового елементу...

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Bibliographic Details
Date:	2024
Main Authors:	Zozulia, V. O., Botsula, O. V., Prykhodko, K. H.
Format:	Article
Language:	Ukrainian
Published:	Видавничий дім «Академперіодика» 2024
Subjects:	millimeter wave active side boundary (ASB) graded layer impact ionization mole fraction oscillation efficiency output power intervalley transfer of electrons
Online Access:	http://rpra-journal.org.ua/index.php/ra/article/view/1457
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Journal Title:	Radio physics and radio astronomy

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Radio physics and radio astronomy

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