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Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors

The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteri...

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Bibliographic Details
Date:	2012
Main Authors:	Korolev, O. M., Shulga, V. M.
Format:	Article
Language:	Russian
Published:	Видавничий дім «Академперіодика» 2012
Online Access:	http://rpra-journal.org.ua/index.php/ra/article/view/427
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Journal Title:	Radio physics and radio astronomy

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Radio physics and radio astronomy

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