Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors

• Datum: 2012
• Hauptverfasser: Korolev, O. M., Shulga, V. M.
• Format: Artikel
• Sprache: Russisch
• Veröffentlicht: Видавничий дім «Академперіодика» 2012
• Online Zugang: http://rpra-journal.org.ua/index.php/ra/article/view/427
• Назва журналу: Radio physics and radio astronomy

The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteri...