GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
The technique for studying the Gunn diodes with electron tunneling injection from a cathode contact has been developed by employing the two-temperature model of intervalley electron transfer in GaAs. Physical phenomena related to the effects of intervalley electron transfer in the diode active regio...
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| Datum: | 2013 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Russisch |
| Veröffentlicht: |
Видавничий дім «Академперіодика»
2013
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| Online Zugang: | http://rpra-journal.org.ua/index.php/ra/article/view/639 |
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| Назва журналу: | Radio physics and radio astronomy |
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Radio physics and radio astronomy| Zusammenfassung: | The technique for studying the Gunn diodes with electron tunneling injection from a cathode contact has been developed by employing the two-temperature model of intervalley electron transfer in GaAs. Physical phenomena related to the effects of intervalley electron transfer in the diode active region and resonance electron tunneling in n:GaAs-i:AlAs-n:GaAs-i:AlAs-n:GaAs diode cathode region are studied. It is shown that the GaAs Gunn diodes with AlAs-GaAs-AlAs resonance tunnel cathode may have three voltage-spaced zones of millimeter wavelength oscillation. The voltage-current, power and frequency characteristics are found for the diodes with different lengths of i:AlAs layers and cross-sectional areas of a cathode contact. |
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