Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values – which yield the diode maximum generation efficiency – for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurit...
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| Date: | 2013 |
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| Language: | Russian |
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Видавничий дім «Академперіодика»
2013
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| Online Access: | http://rpra-journal.org.ua/index.php/ra/article/view/736 |
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rpra-journalorgua-article-7362013-02-15T18:42:48Z Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation Влияние металлического контакта к запорному InxGa1-xAs-GaAs-гетерокатоду на работу GaAs-диодов Ганна Arkusha, Yu. V. Prokhorov, E. D. Storozhenko, I. P. The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values – which yield the diode maximum generation efficiency – for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on metal contact are determined. Рассчитана частотная зависимость эффективности генерации m-n:InxGa1-xAs-n:GaAs-n+:GaAs-диодов Ганна с длиной активной области 2.5 мкм. Определены оптимальные значения длины n:InxGa1-xAs-катода, концентрации ионизированных примесей в нем и высоты потенциального барьера на металлическом контакте, при которых эффективность генерации максимальна. Видавничий дім «Академперіодика» 2013-02-15 Article Article application/pdf http://rpra-journal.org.ua/index.php/ra/article/view/736 РАДИОФИЗИКА И РАДИОАСТРОНОМИЯ; Vol 9, No 3 (2004); 331 RADIO PHYSICS AND RADIO ASTRONOMY; Vol 9, No 3 (2004); 331 РАДІОФІЗИКА І РАДІОАСТРОНОМІЯ; Vol 9, No 3 (2004); 331 2415-7007 1027-9636 ru http://rpra-journal.org.ua/index.php/ra/article/view/736/719 |
| institution |
Radio physics and radio astronomy |
| baseUrl_str |
|
| datestamp_date |
2013-02-15T18:42:48Z |
| collection |
OJS |
| language |
Russian |
| format |
Article |
| author |
Arkusha, Yu. V. Prokhorov, E. D. Storozhenko, I. P. |
| spellingShingle |
Arkusha, Yu. V. Prokhorov, E. D. Storozhenko, I. P. Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation |
| author_facet |
Arkusha, Yu. V. Prokhorov, E. D. Storozhenko, I. P. |
| author_sort |
Arkusha, Yu. V. |
| title |
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation |
| title_short |
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation |
| title_full |
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation |
| title_fullStr |
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation |
| title_full_unstemmed |
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation |
| title_sort |
effect of an inxga1-xas-gaas blocking heterocathode metal contact on the gaas ted operation |
| title_alt |
Влияние металлического контакта к запорному InxGa1-xAs-GaAs-гетерокатоду на работу GaAs-диодов Ганна |
| description |
The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values – which yield the diode maximum generation efficiency – for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on metal contact are determined. |
| publisher |
Видавничий дім «Академперіодика» |
| publishDate |
2013 |
| url |
http://rpra-journal.org.ua/index.php/ra/article/view/736 |
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2025-12-02T15:48:17Z |
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2025-12-02T15:48:17Z |
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