Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band
In this paper, an approach to the design of broadband HEMT LNA is proposed, based on the selection of the transistor type adequate to the operation band. By way of the L-band amplifier, the feasibility of ultra-low-noise matching of general-purpose FET is shown. Under these conditions, the noise tem...
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| Sprache: | Russian |
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Видавничий дім «Академперіодика»
2013
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| Online Zugang: | http://rpra-journal.org.ua/index.php/ra/article/view/792 |
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| Назва журналу: | Radio physics and radio astronomy |
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rpra-journalorgua-article-7922013-02-16T19:24:51Z Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band Режим сверхнизких шумов в широкополосном неохлаждаемом усилителе на PHEMT в дециметровом диапазоне Korolev, O. M. Shulga, V. M. In this paper, an approach to the design of broadband HEMT LNA is proposed, based on the selection of the transistor type adequate to the operation band. By way of the L-band amplifier, the feasibility of ultra-low-noise matching of general-purpose FET is shown. Under these conditions, the noise temperature of the amplifier (Tn) is dominantly determined by the minimum noise temperature of the transistor (Tmin) i. e. Tn/Tmin£1.2. The obtained results permit predicting the possibility of broadband LNA noise reduction down to 10 K without cryogenic cooling. В работе предлагается метод разработки малошумящих широкополосных усилителей на HEMT, базирующийся на адекватном диапазону выборе транзисторных структур. На примере расчета и экспериментального исследования усилителя в дециметровом диапазоне показано, что транзисторы широкого применения допускают реализацию сверхмалошумящего режима согласования, при котором шумовая температура усилителя Tn в основном определяется минимальной температурой шумов транзистора Tmin: Tn/Tmin не превышает 1.2. Полученные результаты позволяют прогнозировать возможность дальнейшего снижения шумов широкополосных усилителей дециметрового диапазона до уровня 10 К без использования криоохлаждения. Видавничий дім «Академперіодика» 2013-02-16 Article Article application/pdf http://rpra-journal.org.ua/index.php/ra/article/view/792 РАДИОФИЗИКА И РАДИОАСТРОНОМИЯ; Vol 8, No 1 (2003); 21 RADIO PHYSICS AND RADIO ASTRONOMY; Vol 8, No 1 (2003); 21 РАДІОФІЗИКА І РАДІОАСТРОНОМІЯ; Vol 8, No 1 (2003); 21 2415-7007 1027-9636 ru http://rpra-journal.org.ua/index.php/ra/article/view/792/430 |
| institution |
Radio physics and radio astronomy |
| baseUrl_str |
|
| datestamp_date |
2013-02-16T19:24:51Z |
| collection |
OJS |
| language |
Russian |
| format |
Article |
| author |
Korolev, O. M. Shulga, V. M. |
| spellingShingle |
Korolev, O. M. Shulga, V. M. Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band |
| author_facet |
Korolev, O. M. Shulga, V. M. |
| author_sort |
Korolev, O. M. |
| title |
Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band |
| title_short |
Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band |
| title_full |
Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band |
| title_fullStr |
Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band |
| title_full_unstemmed |
Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band |
| title_sort |
ultra-low-noise operation of broadband uncooled phemt amplifier in ultrahigh-frequency band |
| title_alt |
Режим сверхнизких шумов в широкополосном неохлаждаемом усилителе на PHEMT в дециметровом диапазоне |
| description |
In this paper, an approach to the design of broadband HEMT LNA is proposed, based on the selection of the transistor type adequate to the operation band. By way of the L-band amplifier, the feasibility of ultra-low-noise matching of general-purpose FET is shown. Under these conditions, the noise temperature of the amplifier (Tn) is dominantly determined by the minimum noise temperature of the transistor (Tmin) i. e. Tn/Tmin£1.2. The obtained results permit predicting the possibility of broadband LNA noise reduction down to 10 K without cryogenic cooling. |
| publisher |
Видавничий дім «Академперіодика» |
| publishDate |
2013 |
| url |
http://rpra-journal.org.ua/index.php/ra/article/view/792 |
| work_keys_str_mv |
AT korolevom ultralownoiseoperationofbroadbanduncooledphemtamplifierinultrahighfrequencyband AT shulgavm ultralownoiseoperationofbroadbanduncooledphemtamplifierinultrahighfrequencyband AT korolevom režimsverhnizkihšumovvširokopolosnomneohlaždaemomusilitelenaphemtvdecimetrovomdiapazone AT shulgavm režimsverhnizkihšumovvširokopolosnomneohlaždaemomusilitelenaphemtvdecimetrovomdiapazone |
| first_indexed |
2025-12-02T15:46:06Z |
| last_indexed |
2025-12-02T15:46:06Z |
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1850411966376443904 |