Ultra-Low-Noise Operation of Broadband Uncooled PHEMT Amplifier in Ultrahigh-Frequency Band
In this paper, an approach to the design of broadband HEMT LNA is proposed, based on the selection of the transistor type adequate to the operation band. By way of the L-band amplifier, the feasibility of ultra-low-noise matching of general-purpose FET is shown. Under these conditions, the noise tem...
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| Datum: | 2013 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Russian |
| Veröffentlicht: |
Видавничий дім «Академперіодика»
2013
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| Online Zugang: | http://rpra-journal.org.ua/index.php/ra/article/view/792 |
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| Назва журналу: | Radio physics and radio astronomy |