Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки
Structural properties of lattice-matched InGaPN on GaAs (001) have comprehensively investigated by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, and atomic force microscopy (AFM). The InGaPN layers were grown by metal organics vapor phase epitaxy (MOVPE). To obtain the lattice-match...
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| Datum: | 2018 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Publishing house "Academperiodika"
2018
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| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/110 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| _version_ | 1863131124030504960 |
|---|---|
| author | Sritonwong, P. Sanorpim, S. Onabe, K. |
| author_facet | Sritonwong, P. Sanorpim, S. Onabe, K. |
| author_sort | Sritonwong, P. |
| baseUrl_str | https://ujp.bitp.kiev.ua/index.php/ujp/oai |
| collection | OJS |
| datestamp_date | 2020-10-19T00:43:40Z |
| description | Structural properties of lattice-matched InGaPN on GaAs (001) have comprehensively investigated by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, and atomic force microscopy (AFM). The InGaPN layers were grown by metal organics vapor phase epitaxy (MOVPE). To obtain the lattice-matched InGaPN on GaAs, flow rates of trimethylindium (TMIn), trimethylgallium (TMGa) were kept, respectively, at 14.7 and 8.6 /umol/min. On the other hand, the N content optimized by varying the flow rate of dimethyhydrazine (DMHy, N precursor) was controlled at 300 /umol/min. With a combination of HRXRD and Raman scattering measurements, the In and N contents are estimated to be 55.8 and 0.9 at%, respectively. The lattice-mismatch lower than 0.47%, which corresponds to the lattice-matching condition, was confirmed for all the layers. The rapid thermal annealing (RTA) process was performed to improvement the crystalline quality of InGaPN layers. The annealing temperature was fixed at 650∘C, which is an optimum growth temperature of a GaAs buffer layer. The annealing time was varied in a range of 30 to 180 s to verify a composition uniformity. With increasing the annealing time up to 120 s, the In and N contents were slightly increased. The AFM-root mean square (RMS) roughness of the InGaPN surface was observed to be reduced. For higher annealing times, the N content was dramatically reduced, whereas the In content was still remained. Moreover, the RMS roughness was observed to be increased. RTA at 650∘C for 120 s demonstrated a significant improvement of structural properties of the lattice-matched InGaPN layers on GaAs (001). |
| doi_str_mv | 10.15407/ujpe63.3.276 |
| first_indexed | 2025-10-02T01:13:47Z |
| format | Article |
| id | ujp2-article-110 |
| institution | Ukrainian Journal of Physics |
| keywords_txt_mv | keywords |
| language | English |
| last_indexed | 2025-10-02T01:13:47Z |
| publishDate | 2018 |
| publisher | Publishing house "Academperiodika" |
| record_format | ojs |
| spelling | ujp2-article-1102020-10-19T00:43:40Z Structural Properties of Lattice-Matched InGaPN on GaAs (001) Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки Sritonwong, P. Sanorpim, S. Onabe, K. InGaPN RTA HRXRD MOVPE Raman scattering Structural properties of lattice-matched InGaPN on GaAs (001) have comprehensively investigated by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, and atomic force microscopy (AFM). The InGaPN layers were grown by metal organics vapor phase epitaxy (MOVPE). To obtain the lattice-matched InGaPN on GaAs, flow rates of trimethylindium (TMIn), trimethylgallium (TMGa) were kept, respectively, at 14.7 and 8.6 /umol/min. On the other hand, the N content optimized by varying the flow rate of dimethyhydrazine (DMHy, N precursor) was controlled at 300 /umol/min. With a combination of HRXRD and Raman scattering measurements, the In and N contents are estimated to be 55.8 and 0.9 at%, respectively. The lattice-mismatch lower than 0.47%, which corresponds to the lattice-matching condition, was confirmed for all the layers. The rapid thermal annealing (RTA) process was performed to improvement the crystalline quality of InGaPN layers. The annealing temperature was fixed at 650∘C, which is an optimum growth temperature of a GaAs buffer layer. The annealing time was varied in a range of 30 to 180 s to verify a composition uniformity. With increasing the annealing time up to 120 s, the In and N contents were slightly increased. The AFM-root mean square (RMS) roughness of the InGaPN surface was observed to be reduced. For higher annealing times, the N content was dramatically reduced, whereas the In content was still remained. Moreover, the RMS roughness was observed to be increased. RTA at 650∘C for 120 s demonstrated a significant improvement of structural properties of the lattice-matched InGaPN layers on GaAs (001). Дослiджено властивостi структури InGaPN на GaAs (001), узгодженi за параметром ґратки, iз застосуванням рентгенiвської дифракцiї високої роздiльної здатностi (РДВРЗ), Раманiвської спектроскопiї (РС) i атомної силової мiкроскопiї (АСМ). Шари InGaPN були вирощенi методом епiтаксiїметалоорганiчних з’єднань з газової фази. При отриманнi InGaPN, узгодженого за параметром ґратки, на GaAs швидкостi потокiв трiметiлiндiя i трiметiлгалiя були, вiдповiдно, 14,7 та 8,6 мкмоль/хв. Змiст N було оптимiзовано при швидкостi потоку диметилгидразина (попередник N), що дорiвнює 300 мкмоль/хв. Комбiнуючи РДВРЗ i РС вимiрювання, змiст In i N оцiнено як 55,8 i 0,9 ат.%, вiдповiдно. Для всiх шарiв неузгодженiсть ґратки була менше 0,47%. Для полiпшення якостi ґратки InGaPN шарiв, застосований швидкий термiчний вiдпал (ШТВ) при температурi 650 ∘C, оптимальної для зростання GaAs буферного шару. Час вiдпалу змiнювався вiд 30 до 180 c для досягнення однорiдностi складу. Збiльшення часу вiдпалу до 120 c призвело до незначного зростання змiсту In i N. При цьому АСМ показала, що середньоквадратична шорсткiсть InGaPN поверхнi зменшилася. При збiльшеннi часу вiдпалу рiзко падає вмiст N без змiн у вмiстi In. Середньоквадратична шорсткiсть також зростає. ШТВ при 650 ∘C протягом 120 c значно полiпшив властивостi структури шарiв InGaPN на GaAs (001), узгоджених за параметром ґратки. Publishing house "Academperiodika" 2018-04-20 Article Article Original Research Article (peer-reviewed) Оригінальна дослідницька стаття (з незалежним рецензуванням) application/pdf https://ujp.bitp.kiev.ua/index.php/ujp/article/view/110 10.15407/ujpe63.3.276 Ukrainian Journal of Physics; Vol. 63 No. 3 (2018); 276 Український фізичний журнал; Том 63 № 3 (2018); 276 2071-0194 2071-0186 10.15407/ujpe63.3 en https://ujp.bitp.kiev.ua/index.php/ujp/article/view/110/62 |
| spellingShingle | Sritonwong, P. Sanorpim, S. Onabe, K. Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки |
| title | Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки |
| title_alt | Structural Properties of Lattice-Matched InGaPN on GaAs (001) |
| title_full | Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки |
| title_fullStr | Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки |
| title_full_unstemmed | Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки |
| title_short | Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки |
| title_sort | структурні властивості ingapn на gaas (001), узгоджені за параметром ґратки |
| topic_facet | InGaPN RTA HRXRD MOVPE Raman scattering |
| url | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/110 |
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