Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки
Structural properties of lattice-matched InGaPN on GaAs (001) have comprehensively investigated by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, and atomic force microscopy (AFM). The InGaPN layers were grown by metal organics vapor phase epitaxy (MOVPE). To obtain the lattice-match...
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| Datum: | 2018 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/110 |
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| Назва журналу: | Ukrainian Journal of Physics |