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Структурні властивості InGaPN на GaAs (001), узгоджені за параметром ґратки

Structural properties of lattice-matched InGaPN on GaAs (001) have comprehensively investigated by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, and atomic force microscopy (AFM). The InGaPN layers were grown by metal organics vapor phase epitaxy (MOVPE). To obtain the lattice-match...

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Bibliographic Details
Date:	2018
Main Authors:	Sritonwong, P., Sanorpim, S., Onabe, K.
Format:	Article
Language:	English
Published:	Publishing house "Academperiodika" 2018
Online Access:	https://ujp.bitp.kiev.ua/index.php/ujp/article/view/110
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Journal Title:	Ukrainian Journal of Physics

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Ukrainian Journal of Physics

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