Донор-акцепторна взаємодія в плівках гетероструктур і композитів тетрацена із тетраціанхінодиметаном

• Дата: 2018
• Автори: Gorishnyi, M. P., Verbitsky, A. B.
• Формат: Стаття
• Мова: English; Ukrainian
• Опубліковано: Publishing house "Academperiodika" 2018
• Теми: донор-акцепторна взаємодiя; плiвки; гетероструктури; композити; тетрацен; тетрацiанохiнодиметан; спектр поглинання; фотовольтаїчний вiдгук; фото-ерс; 548.735.7 535.343.1 535.215.6: 547.682.1.; donor-acceptor interaction; films; heterostructures; composites; tetracene; tetracyanoquinodimethane; absorption spectrum; photovoltaic response; photo-emf
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018030
• Назва журналу: Ukrainian Journal of Physics

The structures and the absorption and photovoltaic spectra of thin films of tetracene (TC) and tetracyanoquinodimethane (TCNQ), as well as the films of their heterostructures (TC/TCNQ) and composites (TC + TCNQ), have been studied. The heterostructures and composites are obtained by the thermal sputtering of the components – successively or simultaneously, respectively – in vacuum. The photovoltaic spectra were measured, by using the condenser method. It is found for the first time that the largest changes ΔD1 in the TC/TCNQ and TC + TCNQ absorption spectra with respect to the sum of the absorption spectra of the components are observed in the intervals of TCNQ dimeric bands at 2.214 eV (ΔD1 < 0) and in all TC bands (ΔD1 > 0). Those changes testify to the formation of charge transfer complexes between the TC (the electron donor) and TCNQ (the electron acceptor) molecules at the interfaces in the TC/TCNQ heterostructures and in the bulk of TC + TCNQ composites, which is also confirmed by the appearance of TC+- and TCNQ−-bands in the photovoltaic spectra of both the heterostructure and composite films. This result is important for a deeper understanding of the operating mechanisms in various potentially imaginable devices based on those heterostructures and composites (solar cells, field-effect transistors, and light-emitting diodes).