Вирощування товстих монокристалічних плівок La-заміщеного залізо-ітрієвого гранату з відновлювальними параметрами

Basic principles of growing the thick (35–60 мm) single-crystalline La-substituted yttrium-iron garnet (Y3−xLaxFe5O12, La :YIG) films with reproducible parameters have been formulated. La :YIG films are grown on gallium-gadolinium garnet (Gd3Ga5O12) substrates from a supercooled melt-solution (MS) c...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2019
Автори: Yushchuk, S. I., Yuryev, S. O., Pokladok, N. T.
Формат: Стаття
Мова:English
Ukrainian
Опубліковано: Publishing house "Academperiodika" 2019
Теми:
Онлайн доступ:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018216
Теги: Додати тег
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Назва журналу:Ukrainian Journal of Physics

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Ukrainian Journal of Physics
Опис
Резюме:Basic principles of growing the thick (35–60 мm) single-crystalline La-substituted yttrium-iron garnet (Y3−xLaxFe5O12, La :YIG) films with reproducible parameters have been formulated. La :YIG films are grown on gallium-gadolinium garnet (Gd3Ga5O12) substrates from a supercooled melt-solution (MS) consisting of Y2O3, La2O3, and Fe2O3 oxides and the PbO–B2O3 solvent. In order to minimize the implantation of Pb2+ ions into the films, which degrades the film quality, the epitaxy has to be performed at high temperatures and a low MS supercooling. It is found that, in order to maintain a constant growth rate of La :YIG films with reproducible parameters, a large MS mass (10–16 kg) has to be used, and the MS temperature has to be permanently lowered at a rate of 0.042 K/min.