Дослідження параметрів глибокого рівня в напівпровідниках
We propose to use methods involving a deformation for the determination of deep-level parameters in semiconductors. The methods are based on the measurement of strain parameters of compensated and overcompensated semiconductors. The dynamic changes of the current flow in compensated and overcompensa...
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| Date: | 2018 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2018
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018241 |
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| Journal Title: | Ukrainian Journal of Physics |