Особливостi перенесення заряду в структурах Mo/n-Si з бар’єром шотки
Forward and reverse current-voltage characteristics of Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. The Schottky barrier height is found to increase and the ideality factor to decrease, as the temperature grows. The obtained results are ana...
Збережено в:
| Дата: | 2018 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Publishing house "Academperiodika"
2018
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018276 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозиторії
Ukrainian Journal of Physics| Резюме: | Forward and reverse current-voltage characteristics of Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. The Schottky barrier height is found to increase and the ideality factor to decrease, as the temperature grows. The obtained results are analyzed in the framework of a non-uniform contact model. The average value and the standard deviation of a Schottky barrier height are determined to be 0.872 and 0.099 V, respectively, at T = 130220 K and 0.656 and 0.036 V, respectively, at T = 230330 K. Thermionic emission over the non-uniform barrier and tunneling are shown to be the dominant processes of charge transfer at a reverse bias voltage. |
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