Особливостi перенесення заряду в структурах Mo/n-Si з бар’єром шотки
Forward and reverse current-voltage characteristics of Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. The Schottky barrier height is found to increase and the ideality factor to decrease, as the temperature grows. The obtained results are ana...
Gespeichert in:
| Datum: | 2018 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
|
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018276 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Ukrainian Journal of Physics |