Особливостi перенесення заряду в структурах Mo/n-Si з бар’єром шотки
Forward and reverse current-voltage characteristics of Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. The Schottky barrier height is found to increase and the ideality factor to decrease, as the temperature grows. The obtained results are ana...
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| Date: | 2018 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2018
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| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018276 |
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| Journal Title: | Ukrainian Journal of Physics |