Особливостi перенесення заряду в структурах Mo/n-Si з бар’єром шотки

• Дата: 2018
• Автор: Olikh, O. Ya.
• Формат: Стаття
• Мова: English
• Опубліковано: Publishing house "Academperiodika" 2018
• Теми: inhomogeneous Schottky barrier; thermionic emission; silicon
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018276
• Назва журналу: Ukrainian Journal of Physics

Forward and reverse current-voltage characteristics of Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. The Schottky barrier height is found to increase and the ideality factor to decrease, as the temperature grows. The obtained results are ana...