Рекомбiнацiйнi характеристики пластин монокристалiчного кремнiю з приповерхневим порушеним шаром

• Дата: 2018
• Автори: Sachenko, A. V., Kostylyov, V. P., Litovchenko, V. G., Popov, V. G., Romanyuk, B. M., Chernenko, V. V., Naseka, V. M., Slusar, T. V., Kyrylova, S. I., Komarov, F. F.
• Формат: Стаття
• Мова: English
• Опубліковано: Publishing house "Academperiodika" 2018
• Теми: surface photovoltage; surface recombination; silicon
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018278
• Назва журналу: Ukrainian Journal of Physics

Spectral dependences of the small-signal surface photovoltage, Vf (л), with a region of short- wave recession have been studied experimentally and theoretically. The dependences Vf (л) are shown to enable important information concerning a modification of surface and bulk recombination properties of the photosensitive silicon material in the short-wave spectral range to be obtained experimentally with the use of a nondestructive technique. In particular, theformation of a damaged near-surface layer owing to the Fe implantation is found to bring about a significant decrease in the diffusion length (i.e. the lifetime) in the implanted layer and an increase of the effective surface recombination rate on the illuminated surface.