Рекомбiнацiйнi характеристики пластин монокристалiчного кремнiю з приповерхневим порушеним шаром
Spectral dependences of the small-signal surface photovoltage, Vf (л), with a region of short- wave recession have been studied experimentally and theoretically. The dependences Vf (л) are shown to enable important information concerning a modification of surface and bulk recombination properties of...
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| Date: | 2018 |
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| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2018
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| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018278 |
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| Journal Title: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Summary: | Spectral dependences of the small-signal surface photovoltage, Vf (л), with a region of short- wave recession have been studied experimentally and theoretically. The dependences Vf (л) are shown to enable important information concerning a modification of surface and bulk recombination properties of the photosensitive silicon material in the short-wave spectral range to be obtained experimentally with the use of a nondestructive technique. In particular, theformation of a damaged near-surface layer owing to the Fe implantation is found to bring about a significant decrease in the diffusion length (i.e. the lifetime) in the implanted layer and an increase of the effective surface recombination rate on the illuminated surface. |
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