Вплив домiшки олова на деградацiю провiдностi в n-кремнiї при електронному опромiненнi

The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effec...

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Bibliographic Details
Date:2018
Main Author: Kras’ko, M. M.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2018
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018289
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics
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Summary:The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effect is more pronounced in high-resistance samples, whereas the rates of electron removal from low-resistance ones are almost identical in both materials. This fact can be explained by the difference between the formation efficiency of main compensating radiation- induced defects in n-Si doped with Sn (SnV and VP complexes) and undoped n-Si (mainly, VP complexes), which depends of the concentration of phosphorus in the samples.