Вплив домiшки олова на деградацiю провiдностi в n-кремнiї при електронному опромiненнi
The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effec...
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| Datum: | 2018 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English Ukrainian |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018289 |
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| Назва журналу: | Ukrainian Journal of Physics |