Вплив домiшки олова на деградацiю провiдностi в n-кремнiї при електронному опромiненнi

The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effec...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Datum:2018
1. Verfasser: Kras’ko, M. M.
Format: Artikel
Sprache:English
Ukrainian
Veröffentlicht: Publishing house "Academperiodika" 2018
Schlagworte:
Online Zugang:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018289
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Назва журналу:Ukrainian Journal of Physics

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Ukrainian Journal of Physics