Екситоннi характеристики InxGa1-xAs-GaAs гетероструктур з квантовими ямами при низьких температурах
Characteristics of GaAs/InxGa1 xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their corresponding theoretical analysis. The experiment...
Збережено в:
| Дата: | 2018 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2018
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018291 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | Characteristics of GaAs/InxGa1 xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their corresponding theoretical analysis. The experimentally obtained temperature dependences of the energy position of the PL band maximum, hmax, band half-width, W0, and intensity, I, are examined. The values of energy of local phonons, Eph, exciton binding energy, Eex, and the Huang–Rhys factor, N, are determined. A comparison between the values obtained for those quantities and the growth parameters of considered specimens allowed us to assert that the highest-quality specimens are those that are characterized by low N values and one-mode phonon spectra. |
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