Екситоннi характеристики InxGa1-xAs-GaAs гетероструктур з квантовими ямами при низьких температурах

• Datum: 2018
• Hauptverfasser: Litovchenko, N. M., Korbutyak, D. V., Strilchuk, O. M.
• Format: Artikel
• Sprache: English; Ukrainian
• Veröffentlicht: Publishing house "Academperiodika" 2018
• Schlagworte: фотолюмiнесценцiя; квантова яма; екситон; фонон
• Online Zugang: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018291
• Назва журналу: Ukrainian Journal of Physics

Characteristics of GaAs/InxGa1 xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their corresponding theoretical analysis. The experiment...