Екситоннi характеристики InxGa1-xAs-GaAs гетероструктур з квантовими ямами при низьких температурах
Characteristics of GaAs/InxGa1 xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their corresponding theoretical analysis. The experiment...
Saved in:
| Date: | 2018 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2018
|
| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018291 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Ukrainian Journal of Physics |