Конкурентнi механiзми гiстерезису опору в графеновому каналi
A model for rival mechanisms of hysteresis that appears in the dependence of the resistivity of graphene channels created on substrates of various nature on the gate voltage has been developed. Two types of hysteresis were distinguished: direct (associated with the presence of adsorbates with dipole...
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| Дата: | 2018 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
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Publishing house "Academperiodika"
2018
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| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018316 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| id |
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ujp2-article-20183162019-03-06T11:27:49Z Rival Mechanisms of Hysteresis in the Resistivity of Graphene Channel Конкурентнi механiзми гiстерезису опору в графеновому каналi Kurchak, A. I. Morozovska, A. N. Strikha, M. V. графен механiзми гiстерезису адсорбати поверхневi диполi graphene mechanisms of hysteresis adsorbates surface dipoles A model for rival mechanisms of hysteresis that appears in the dependence of the resistivity of graphene channels created on substrates of various nature on the gate voltage has been developed. Two types of hysteresis were distinguished: direct (associated with the presence of adsorbates with dipole moments on the surface and the interface) and inverse (associated with the capture of charge carriers from the graphene layer by the localized states at the interface graphene–substrate). A capability of discerning between those channels by varying the rate of gate voltage sween was discussed. A good agreement is obtained between our theoretical predictions and the experimental data available in the literature. Побудовано модель для конкурентних механiзмiв гiстерезису залежностi опору графенового каналу на пiдкладцi рiзної природи вiд напруги на затворi: прямого (зумовленого наявнiстю на поверхнi й iнтерфейсi адсорбатiв з дипольним моментом) i оберненого (зумовленого захопленням носiїв з шару графену на локалiзованi стани на iнтерфейсi графен–пiдкладка). Обговорено можливiсть дискримiнацiї цих каналiв шляхом варiацiї швидкостi змiни напруги на затворi. Вiдзначено добру вiдповiднiсть передбачень теорiї з наявними в лiтературi експериментальними даними. Publishing house "Academperiodika" 2018-10-06 Article Article Peer-reviewed Рецензована стаття application/pdf application/pdf https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018316 10.15407/ujpe58.05.0472 Ukrainian Journal of Physics; Vol. 58 No. 5 (2013); 472 Український фізичний журнал; Том 58 № 5 (2013); 472 2071-0194 2071-0186 10.15407/ujpe58.05 en uk https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018316/263 https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018316/264 Copyright (c) 2018 Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine |
| institution |
Ukrainian Journal of Physics |
| collection |
OJS |
| language |
English Ukrainian |
| topic |
графен механiзми гiстерезису адсорбати поверхневi диполi graphene mechanisms of hysteresis adsorbates surface dipoles |
| spellingShingle |
графен механiзми гiстерезису адсорбати поверхневi диполi graphene mechanisms of hysteresis adsorbates surface dipoles Kurchak, A. I. Morozovska, A. N. Strikha, M. V. Конкурентнi механiзми гiстерезису опору в графеновому каналi |
| topic_facet |
графен механiзми гiстерезису адсорбати поверхневi диполi graphene mechanisms of hysteresis adsorbates surface dipoles |
| format |
Article |
| author |
Kurchak, A. I. Morozovska, A. N. Strikha, M. V. |
| author_facet |
Kurchak, A. I. Morozovska, A. N. Strikha, M. V. |
| author_sort |
Kurchak, A. I. |
| title |
Конкурентнi механiзми гiстерезису опору в графеновому каналi |
| title_short |
Конкурентнi механiзми гiстерезису опору в графеновому каналi |
| title_full |
Конкурентнi механiзми гiстерезису опору в графеновому каналi |
| title_fullStr |
Конкурентнi механiзми гiстерезису опору в графеновому каналi |
| title_full_unstemmed |
Конкурентнi механiзми гiстерезису опору в графеновому каналi |
| title_sort |
конкурентнi механiзми гiстерезису опору в графеновому каналi |
| title_alt |
Rival Mechanisms of Hysteresis in the Resistivity of Graphene Channel |
| description |
A model for rival mechanisms of hysteresis that appears in the dependence of the resistivity of graphene channels created on substrates of various nature on the gate voltage has been developed. Two types of hysteresis were distinguished: direct (associated with the presence of adsorbates with dipole moments on the surface and the interface) and inverse (associated with the capture of charge carriers from the graphene layer by the localized states at the interface graphene–substrate). A capability of discerning between those channels by varying the rate of gate voltage sween was discussed. A good agreement is obtained between our theoretical predictions and the experimental data available in the literature. |
| publisher |
Publishing house "Academperiodika" |
| publishDate |
2018 |
| url |
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018316 |
| work_keys_str_mv |
AT kurchakai rivalmechanismsofhysteresisintheresistivityofgraphenechannel AT morozovskaan rivalmechanismsofhysteresisintheresistivityofgraphenechannel AT strikhamv rivalmechanismsofhysteresisintheresistivityofgraphenechannel AT kurchakai konkurentnimehanizmigisterezisuoporuvgrafenovomukanali AT morozovskaan konkurentnimehanizmigisterezisuoporuvgrafenovomukanali AT strikhamv konkurentnimehanizmigisterezisuoporuvgrafenovomukanali |
| first_indexed |
2023-03-24T08:55:20Z |
| last_indexed |
2023-03-24T08:55:20Z |
| _version_ |
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