Оптоэлектронные свойства тонких пленок гидрогенизированного аморфного кремния-углерода и нанокристаллического кремния

Some parameters of thin films fabricated of hydrogenated amorphous silicon–carbon alloys a-Si1 xCx:H with x = 0 and 0.5 and nanocrystalline silicon (nc-Si) and serving as a basis for developing solar cells including a Schottky barrier and p–i–n and double p–i–n heterojunctions have been considered....

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2018
Автори: Najafov, B. A., Dadashova, V. V.
Формат: Стаття
Мова:English
Ukrainian
Опубліковано: Publishing house "Academperiodika" 2018
Теми:
Онлайн доступ:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018375
Теги: Додати тег
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Назва журналу:Ukrainian Journal of Physics

Репозитарії

Ukrainian Journal of Physics
Опис
Резюме:Some parameters of thin films fabricated of hydrogenated amorphous silicon–carbon alloys a-Si1 xCx:H with x = 0 and 0.5 and nanocrystalline silicon (nc-Si) and serving as a basis for developing solar cells including a Schottky barrier and p–i–n and double p–i–n heterojunctions have been considered. In double p–i–n heterojunctions, a-SiC/a-Si/nc-Si, the p-layer was made from a-SiC:H and used as a “window”, and the n-layer was made from nc-Si. The current-voltage characteristics of solar cells of each type at their illumination are studied. The highest efficiency of 11.5% was found for solar cells with the double p–i–n heterojunctions in the case where a cell 1 cm2 in area was illuminated with light of a 100-mW/cm2 intensity.