Поведiнка водню при кристалiзацiї тонких плiвок кремнiю, легованих оловом
The behavior of a hydrogen impurity in the course of crystallization of thin silicon films doped with tin (a-SiSn films) has been studied. It is found that the band located at about 2000–2200 cm^−1 and corresponding to the IR absorption at silicon–hydrogen bonds is absent from the spectra of as-deposi...
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| Date: | 2018 |
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| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2018
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018399 |
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| Journal Title: | Ukrainian Journal of Physics |