Поведiнка водню при кристалiзацiї тонких плiвок кремнiю, легованих оловом

The behavior of a hydrogen impurity in the course of crystallization of thin silicon films doped with tin (a-SiSn films) has been studied. It is found that the band located at about 2000–2200 cm^−1 and corresponding to the IR absorption at silicon–hydrogen bonds is absent from the spectra of as-deposi...

Full description

Saved in:
Bibliographic Details
Date:2018
Main Authors: Rudenko, R. M., Kras’ko, M. M., Voitovych, V. V., Kolosyuk, A. G., Povarchuk, V. Yu., Kraichynskyi, A. M., Yukhymchuck, V. O., Bratus’, V. Ya., Voitovych, M. V., Zaloilo, I. A.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2018
Subjects:
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018399
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Ukrainian Journal of Physics

Institution

Ukrainian Journal of Physics