Поверхневi напруження на початкових етапах окислення GexSi1−x/Si(001)
Elastic stresses arising at the clean GexSi1−x/Si(001) surface, as well as at the initial stages of its oxidation, are considered qualitatively by analyzing the changes of unit cell dimensions occurring owing to the ad-dimer formation or the atomic or molecular adsorption on the unit cell surfaces....
Збережено в:
| Дата: | 2018 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2018
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018423 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | Elastic stresses arising at the clean GexSi1−x/Si(001) surface, as well as at the initial stages of its oxidation, are considered qualitatively by analyzing the changes of unit cell dimensions occurring owing to the ad-dimer formation or the atomic or molecular adsorption on the unit cell surfaces. The stress character is found to be almost identical for the clean GexSi1−x/Si(001) surface and the GexSi1−x/Si(001) surface with adsorbed oxygen molecules or one to three adsorbed oxygen atoms. In addition, the surface stresses revealed a significant anisotropy: they turned out compressive along the dimer rows and three times as large as tensile stresses in the perpendicular direction (along the interdimer bonds). |
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