Поверхневi напруження на початкових етапах окислення GexSi1−x/Si(001)
Elastic stresses arising at the clean GexSi1−x/Si(001) surface, as well as at the initial stages of its oxidation, are considered qualitatively by analyzing the changes of unit cell dimensions occurring owing to the ad-dimer formation or the atomic or molecular adsorption on the unit cell surfaces....
Saved in:
| Date: | 2018 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2018
|
| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018423 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Ukrainian Journal of Physics |
Institution
Ukrainian Journal of Physics| Summary: | Elastic stresses arising at the clean GexSi1−x/Si(001) surface, as well as at the initial stages of its oxidation, are considered qualitatively by analyzing the changes of unit cell dimensions occurring owing to the ad-dimer formation or the atomic or molecular adsorption on the unit cell surfaces. The stress character is found to be almost identical for the clean GexSi1−x/Si(001) surface and the GexSi1−x/Si(001) surface with adsorbed oxygen molecules or one to three adsorbed oxygen atoms. In addition, the surface stresses revealed a significant anisotropy: they turned out compressive along the dimer rows and three times as large as tensile stresses in the perpendicular direction (along the interdimer bonds). |
|---|